The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 22, 2022

Filed:

Jul. 21, 2015
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chien Ling Hwang, Hsinchu, TW;

Yi-Wen Wu, Xizhi, TW;

Chun-Chieh Wang, Beigang Township, TW;

Chung-Shi Liu, Shin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76885 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/81 (2013.01); H01L 2224/023 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0361 (2013.01); H01L 2224/03614 (2013.01); H01L 2224/03901 (2013.01); H01L 2224/03912 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05016 (2013.01); H01L 2224/05024 (2013.01); H01L 2224/0569 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05181 (2013.01); H01L 2224/05187 (2013.01); H01L 2224/05578 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/10126 (2013.01); H01L 2224/1132 (2013.01); H01L 2224/1145 (2013.01); H01L 2224/1146 (2013.01); H01L 2224/1147 (2013.01); H01L 2224/1182 (2013.01); H01L 2224/11452 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/11464 (2013.01); H01L 2224/11614 (2013.01); H01L 2224/11827 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/11901 (2013.01); H01L 2224/11912 (2013.01); H01L 2224/1369 (2013.01); H01L 2224/13099 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13561 (2013.01); H01L 2224/13562 (2013.01); H01L 2224/13564 (2013.01); H01L 2224/13565 (2013.01); H01L 2224/13582 (2013.01); H01L 2224/13583 (2013.01); H01L 2224/13609 (2013.01); H01L 2224/13611 (2013.01); H01L 2224/13639 (2013.01); H01L 2224/13644 (2013.01); H01L 2224/13647 (2013.01); H01L 2224/13655 (2013.01); H01L 2224/13664 (2013.01); H01L 2224/16238 (2013.01); H01L 2224/814 (2013.01); H01L 2224/81024 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/81411 (2013.01); H01L 2224/81413 (2013.01); H01L 2224/81416 (2013.01); H01L 2224/81439 (2013.01); H01L 2224/81447 (2013.01); H01L 2224/81455 (2013.01); H01L 2224/81815 (2013.01); H01L 2924/0103 (2013.01); H01L 2924/014 (2013.01); H01L 2924/0104 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01007 (2013.01); H01L 2924/01012 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01014 (2013.01); H01L 2924/01015 (2013.01); H01L 2924/01019 (2013.01); H01L 2924/01023 (2013.01); H01L 2924/01024 (2013.01); H01L 2924/01025 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01032 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01038 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01049 (2013.01); H01L 2924/01073 (2013.01); H01L 2924/01075 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/04941 (2013.01); H01L 2924/04953 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/14 (2013.01); H01L 2924/206 (2013.01); H01L 2924/2064 (2013.01); H01L 2924/20641 (2013.01); H01L 2924/20642 (2013.01);
Abstract

An integrated circuit device includes a semiconductor substrate; and a pad region over the semiconductor substrate. The integrated circuit device further includes an under-bump-metallurgy (UBM) layer over the pad region. The integrated circuit device further includes a conductive pillar on the UBM layer, wherein the conductive pillar has a sidewall surface and a top surface. The integrated circuit device further includes a protection structure over the sidewall surface of the conductive pillar, wherein sidewalls of the UBM layer are substantially free of the protection structure, and the protection structure is a non-metal material.


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