The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2022
Filed:
Jan. 08, 2021
Industrial Technology Research Institute, Hsinchu, TW;
Shao-An Yan, New Taipei, TW;
Chieh-Wei Feng, Taoyuan, TW;
Tzu-Yang Ting, Taipei, TW;
Tzu-Hao Yu, Yilan County, TW;
Chien-Hsun Chu, Kaohsiung, TW;
Jui-Wen Yang, New Taipei, TW;
Hsin-Cheng Lai, Taoyuan, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A redistribution structure including a first redistribution layer is provided. The first redistribution layer includes a dielectric layer; at least one conductive structure located in the dielectric layer, wherein the at least one conductive structure has a width L; and at least one dummy structure located adjacent to the at least one conductive structure and located in the dielectric layer, and the at least one dummy structure has a width D, wherein there is a gap width S between the at least one dummy structure and the at least one conductive structure, and a degree of planarization DOP of the first redistribution layer is greater than or equal to 95%, wherein DOP=[1−(h/T)]*100%, and h refers to a difference between a highest height and a lowest height of a top surface of the dielectric layer; and T refers to a thickness of the at least one conductive structure.