The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 08, 2022

Filed:

Jul. 30, 2018
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Carlos H. Diaz, Mountain View, CA (US);

Chun-Hsiung Lin, Zhubei, TW;

Huicheng Chang, Tainan, TW;

Syun-Ming Jang, Hsin-Chu, TW;

Chien-Hsun Wang, Hsinchu, TW;

Mao-Lin Huang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 29/778 (2006.01); H01L 29/786 (2006.01); B82Y 10/00 (2011.01); H01L 21/02 (2006.01); H01L 29/165 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7842 (2013.01); B82Y 10/00 (2013.01); H01L 21/02603 (2013.01); H01L 29/068 (2013.01); H01L 29/0665 (2013.01); H01L 29/0669 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/66431 (2013.01); H01L 29/66795 (2013.01); H01L 29/775 (2013.01); H01L 29/7781 (2013.01); H01L 29/7853 (2013.01); H01L 29/78696 (2013.01); H01L 29/0676 (2013.01); H01L 29/165 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01); Y10S 977/938 (2013.01);
Abstract

In a method of manufacturing a semiconductor device, a support layer is formed over a substrate. A patterned semiconductor layer made of a first semiconductor material is formed over the support layer. A part of the support layer under a part of the semiconductor layer is removed, thereby forming a semiconductor wire. A semiconductor shell layer made of a second semiconductor material different from the first semiconductor material is formed around the semiconductor wire.


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