The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2022
Filed:
Sep. 22, 2020
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Assignee:
ASM IP Holding B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/786 (2006.01); H01L 29/24 (2006.01); H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02568 (2013.01); H01L 21/0262 (2013.01); H01L 21/02145 (2013.01); H01L 21/02271 (2013.01); H01L 21/02609 (2013.01); H01L 29/045 (2013.01); H01L 29/24 (2013.01); H01L 29/78681 (2013.01);
Abstract
Systems for depositing a transition metal chalcogenide film on a substrate by cyclical deposition process are disclosed. The methods may include, contacting the substrate with at least one transition metal containing vapor phase reactant comprising at least one of a hafnium precursor, or a zirconium precursor, and contacting the substrate with at least one chalcogen containing vapor phase reactant. Semiconductor device structures including a transition metal chalcogenide film deposited by the methods of the disclosure are also provided.