The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2022
Filed:
Jan. 13, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Shahaji B. More, Zhubei, TW;
Huai-Tei Yang, Hsin-Chu, TW;
Zheng-Yang Pan, Zhubei, TW;
Shih-Chieh Chang, Taipei, TW;
Chun-Chieh Wang, Kaohsiung, TW;
Cheng-Han Lee, New Taipei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
The present disclosure describes an exemplary method to form p-type fully strained channel (PFSC) or an n-type fully strained channel (NFSC) that can mitigate epitaxial growth defects or structural deformations in the channel region due to processing. The exemplary method can include (i) two or more surface pre-clean treatment cycles with nitrogen trifluoride (NF) and ammonia (NH) plasma, followed by a thermal treatment; (ii) a prebake (anneal); and (iii) a silicon germanium epitaxial growth with a silicon seed layer, a silicon germanium seed layer, or a combination thereof.