The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2022
Filed:
Jun. 04, 2020
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 23/66 (2006.01); H01L 23/00 (2006.01); H01L 23/538 (2006.01); H01L 23/552 (2006.01); H01L 23/31 (2006.01); H01L 25/16 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 21/3205 (2006.01); H01L 21/311 (2006.01); H01L 21/3105 (2006.01); H01L 21/288 (2006.01); H01L 21/321 (2006.01); H01L 21/48 (2006.01); H01Q 1/40 (2006.01);
U.S. Cl.
CPC ...
H01L 23/66 (2013.01); H01L 21/288 (2013.01); H01L 21/31053 (2013.01); H01L 21/31127 (2013.01); H01L 21/32051 (2013.01); H01L 21/32115 (2013.01); H01L 21/486 (2013.01); H01L 21/4857 (2013.01); H01L 21/561 (2013.01); H01L 21/568 (2013.01); H01L 21/6835 (2013.01); H01L 23/3121 (2013.01); H01L 23/3135 (2013.01); H01L 23/5383 (2013.01); H01L 23/5384 (2013.01); H01L 23/5386 (2013.01); H01L 23/5389 (2013.01); H01L 23/552 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 24/96 (2013.01); H01L 25/16 (2013.01); H01Q 1/40 (2013.01); H01L 24/24 (2013.01); H01L 2221/68359 (2013.01); H01L 2221/68381 (2013.01); H01L 2223/6672 (2013.01); H01L 2223/6677 (2013.01); H01L 2224/211 (2013.01); H01L 2224/221 (2013.01); H01L 2224/24265 (2013.01);
Abstract
A method including followings is provided. An encapsulated device including a semiconductor die and an insulating encapsulation laterally encapsulating the semiconductor die is provided. An insulating layer is formed over a surface of the encapsulated device. A groove pattern is formed on the insulating layer. A conductive paste is filled in the groove pattern and the conductive paste filled in the groove pattern is cured.