The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2021
Filed:
Feb. 11, 2020
Applicant:
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/56 (2006.01); H01L 23/29 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3171 (2013.01); H01L 21/02274 (2013.01); H01L 21/56 (2013.01); H01L 21/76892 (2013.01); H01L 23/291 (2013.01); H01L 23/3192 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 2924/181 (2013.01);
Abstract
A semiconductor device includes a first conductive feature and a second conductive feature. A first passivation layer is positioned between the first conductive feature and the second conductive feature. A second passivation layer is positioned between the first conductive feature and the second conductive feature and over the first passivation layer. A lowermost portion of an interface where the first passivation layer contacts the second passivation layer is positioned below 40% or above 60% of a height of the first conductive feature.