The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2021
Filed:
Jun. 25, 2020
Lam Research Corporation, Fremont, CA (US);
Xiang Zhou, Mountain View, CA (US);
Yoshie Kimura, Castro Valley, CA (US);
Duming Zhang, Union City, CA (US);
Chen Xu, Pasadena, CA (US);
Ganesh Upadhyaya, Pleasanton, CA (US);
Mitchell Brooks, Aptos, CA (US);
Lam Research Corportation, Fremont, CA (US);
Abstract
Methods and apparatuses for critical dimension (CD) control of substrate features using integrated atomic layer deposition (ALD) and etch processes are described herein. Methods include etching to form a mask pattern of features on a substrate having a width that is less than a desired width of structures to be subsequently formed by the mask pattern of features, conformally depositing a passivation layer by ALD that increases the width of the mask pattern of features to the desired width, and etching a layer of the substrate to a desired depth to form the plurality of structures having the desired width.