The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 28, 2021

Filed:

Jan. 07, 2020
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Sho Oikawa, Miyagi, JP;

Seiji Yokoyama, Miyagi, JP;

Taichi Okano, Miyagi, JP;

Shunichi Kawasaki, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/67 (2006.01); H01L 21/3213 (2006.01); H01L 21/3065 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32183 (2013.01); H01J 37/32642 (2013.01); H01L 21/3065 (2013.01); H01L 21/32136 (2013.01); H01L 21/67253 (2013.01); H01L 22/00 (2013.01); H01L 22/20 (2013.01); B81C 2201/0142 (2013.01); H01J 2237/3341 (2013.01);
Abstract

A method of processing an object using a plasma processing apparatus is provided. The plasma processing apparatus includes a stage on which the object is placed in a chamber, an outer peripheral member disposed around the stage, a first power supply configured to apply voltage to the outer peripheral member, and a memory storing information about a relationship between the voltage applied to the outer peripheral member and an adjustment amount of a process parameter. The method includes: applying voltage from the first power supply to the outer peripheral member; adjusting the process parameter based on the voltage applied to the outer peripheral member, by referring to the information stored in the memory; and performing a plasma process under a process condition including the adjusted process parameter.


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