The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 2021
Filed:
Feb. 03, 2020
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Shih-Yao Lin, New Taipei, TW;
Kuei-Yu Kao, Hsinchu, TW;
Chi-Sheng Lai, Hsinchu, TW;
Chih-Han Lin, Hsinchu, TW;
Wei-Chung Sun, Hsinchu, TW;
Ming-Ching Chang, Hsinchu, TW;
Chao-Cheng Chen, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/823468 (2013.01); H01L 21/823481 (2013.01); H01L 29/0649 (2013.01); H01L 29/6656 (2013.01); H01L 29/66545 (2013.01); H01L 29/66818 (2013.01);
Abstract
A semiconductor device and method are provided whereby a series of spacers are formed in a first region and a second region of a substrate. The series of spacers in the first region are patterned while the series of spacers in the second region are protected in order to separate the properties of the spacers in the first region from the properties of the spacers in the second region.