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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11205589 B1

PDFFull Text
Date of Patent:
Dec. 21, 2021

Filed:

Oct. 06, 2019

Methods and apparatuses for forming interconnection structures

Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

He Ren, San Jose, CA (US);

Hao Jiang, San Jose, CA (US);

Mehul Naik, San Jose, CA (US);

Srinivas D Nemani, Sunnyvale, CA (US);

Ellie Yieh, San Jose, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:

Moser Taboada

Primary Examiner:

Sheikh Maruf

Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/28 (2006.01); H01L 21/768 (2006.01); H01L 21/285 (2006.01); H01L 21/67 (2006.01); C23C 14/58 (2006.01); H01L 21/3213 (2006.01); C23C 14/16 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76864 (2013.01); C23C 14/16 (2013.01); C23C 14/5806 (2013.01); C23C 14/5873 (2013.01); H01L 21/28568 (2013.01); H01L 21/32136 (2013.01); H01L 21/67069 (2013.01); H01L 21/67109 (2013.01); H01L 21/67167 (2013.01); H01L 21/67196 (2013.01); H01L 21/67207 (2013.01); H01L 21/7685 (2013.01); H01L 21/76862 (2013.01); H01L 21/76892 (2013.01);
Abstract

Methods and apparatus for lowering resistivity of a metal line, including: depositing a first metal layer atop a second metal layer to under conditions sufficient to increase a grain size of a metal of the first metal layer; etching the first metal layer to form a metal line with a first line edge roughness and to expose a portion of the second metal layer; removing impurities from the metal line by a hydrogen treatment process; and annealing the metal line at a pressure between 760 Torr and 76,000 Torr to reduce the first line edge roughness.

Find Patent Forward Citations

Ren, He. (2021). Methods and apparatuses for forming interconnection structures (U.S. Patent No. 11205589). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11205589

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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