The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2021
Filed:
Feb. 25, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chia-Lin Chuang, Taoyuan, TW;
Chia-Hao Chang, Hsinchu, TW;
Cheng-Chi Chuang, New Taipei, TW;
Yu-Ming Lin, Hsinchu, TW;
Chih-Hao Wang, Baoshan Township, Hsinchu County, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a first gate structure and a second gate structure formed over a semiconductor substrate. The semiconductor device structure also includes a first insulating cap structure formed between and adjacent to the first gate structure and the second gate structure. The first insulating cap structure is separated from the semiconductor substrate by a first air gap. The first air gap includes a first portion extending into the first insulating cap structure and a second portion extended from the bottom of the first portion toward the semiconductor substrate. The first portion has a width that is less than the width of the second portion.