The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 14, 2021

Filed:

Jun. 05, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chih-Min Hsiao, Hsinchu, TW;

Chien-Wen Lai, Hsinchu, TW;

Ru-Gun Liu, Hsinchu, TW;

Chih-Ming Lai, Hsinchu, TW;

Wei-Shuo Su, Hsinchu, TW;

Yu-Chen Chang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01L 21/0274 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01);
Abstract

A four signal line unit cell is formed on a substrate using a combination of an extreme ultraviolet photolithography process and one or more self aligned deposition processes. The photolithography process and the self aligned deposition processes result in spacers on a hard mask above the substrate. The spacers define a pattern of signal lines to be formed on the substrate for a unit cell. The photolithography process and self aligned deposition processes result in signal lines having a critical dimension much smaller than features that can be defined by the extreme ultraviolet photolithography process.


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