The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 14, 2021

Filed:

Feb. 05, 2018
Applicants:

Mattson Technology, Inc., Fremont, CA (US);

Beijing E-town Semiconductor Technology, Co., Ltd, Beijing, CN;

Inventors:

Shawming Ma, Sunnyvale, CA (US);

Vladimir Nagorny, Tracy, CA (US);

Dixit V. Desai, Pleasanton, CA (US);

Ryan Pakulski, Discovery Bay, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32522 (2013.01); H01J 37/32422 (2013.01); H01J 37/32513 (2013.01); H01J 37/32715 (2013.01); H01J 37/32816 (2013.01); H01J 37/32834 (2013.01); H01J 37/32899 (2013.01); H01L 21/6719 (2013.01); H01L 21/67069 (2013.01); H01J 37/321 (2013.01);
Abstract

Plasma strip tools with process uniformity control are provided. In one example implementation, a plasma processing apparatus includes a processing chamber, a first pedestal in the processing chamber operable to support a workpiece, and a second pedestal in the processing chamber operable to support another workpiece. The first pedestal can define a first processing station. The second pedestal can define a second processing station. The apparatus can further include a first plasma chamber disposed above the first processing station and a second plasma chamber disposed above the second processing station. The first plasma chamber can be associated with a first inductive plasma source. The first plasma chamber can be separated from the processing chamber by a first separation grid. The second plasma chamber can be associated with a second inductive plasma source. The second plasma chamber can be separated from the processing chamber by a second separation grid.


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