The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2021
Filed:
Apr. 23, 2020
Nxp Usa, Inc., Austin, TX (US);
Edward Christian Mares, Gilbert, AZ (US);
Lakshminarayan Viswanathan, Phoenix, AZ (US);
David James Dougherty, Tempe, AZ (US);
NXP USA, Inc., Austin, TX (US);
Abstract
Power amplifier devices and methods for fabricating power amplifier devices containing frontside heat extraction structures are disclosed. In embodiments, the power amplifier device includes a substrate, a radio frequency (RF) power die bonded to a die support surface of the substrate, and a frontside heat extraction structure further attached to the die support surface. The frontside heat extraction structure includes, in turn, a transistor-overlay portion in direct thermal contact with a frontside of the RF power die, a first heatsink coupling portion thermally coupled to a heatsink region of the substrate, and a primary heat extraction path extending from the transistor-overlay portion to the first heatsink coupling portion. The primary heat extraction path promotes conductive heat transfer from the RF power die to the heatsink region and reduce local temperatures within a transistor channel of the RF power die during operation of the power amplifier device.