The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 07, 2021

Filed:

Feb. 17, 2016
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Ngoc-Hoa Huynh, Forstinning, DE;

Franz-Xaver Muehlbauer, Rimbach, DE;

Claus Waechter, Sinzing, DE;

Veronika Huber, Bad Abbach, DE;

Dominic Maier, Pleystein, DE;

Thomas Kilger, Regenstauf, DE;

Saverio Trotta, Munich, DE;

Ashutosh Baheti, Munich, DE;

Georg Meyer-Berg, Munich, DE;

Maciej Wojnowski, Munich, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 23/367 (2006.01); H01L 23/538 (2006.01); H01Q 9/28 (2006.01); H01Q 1/22 (2006.01); H01Q 9/04 (2006.01); H01Q 21/06 (2006.01); H01L 21/56 (2006.01); H01Q 9/26 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49822 (2013.01); H01L 21/56 (2013.01); H01L 23/3114 (2013.01); H01L 23/3672 (2013.01); H01L 23/3677 (2013.01); H01L 23/5389 (2013.01); H01Q 1/2283 (2013.01); H01Q 9/0407 (2013.01); H01Q 9/285 (2013.01); H01Q 21/061 (2013.01); H01Q 21/065 (2013.01); H01L 23/49816 (2013.01); H01L 2223/6677 (2013.01); H01L 2223/6683 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/73267 (2013.01); H01L 2924/18162 (2013.01); H01Q 9/265 (2013.01);
Abstract

A semiconductor device includes a semiconductor chip and a redistribution layer on a first side of the semiconductor chip. The redistribution layer is electrically coupled to the semiconductor chip. The semiconductor device includes a dielectric layer and an antenna on the dielectric layer. The dielectric layer is between the antenna and the semiconductor chip.


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