The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2021
Filed:
Feb. 28, 2020
Applicant:
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Inventors:
Haiting Wang, Clifton Park, NY (US);
Hong Yu, Clifton Park, NY (US);
Steven J. Bentley, Menands, NY (US);
Assignee:
GlobalFoundries U.S. Inc., Malta, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/423 (2006.01); H01L 23/535 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823456 (2013.01); H01L 21/823475 (2013.01); H01L 23/535 (2013.01); H01L 27/088 (2013.01); H01L 29/42376 (2013.01);
Abstract
An integrated circuit (IC) structure includes a long channel (LC) gate structure over a long channel region, the LC gate structure having a first gate height; and a short channel (SC) gate structure over a short channel region, the SC gate structure having a second gate height. The short channel region is shorter in length than the long channel region. The second gate height of the SC gate structure is no larger than the first gate height of the LC gate structure.