The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2021
Filed:
Jun. 30, 2020
Mattson Technology, Inc., Fremont, CA (US);
Beijing E-town Semiconductor Technology Co., Ltd., Beijing, CN;
Tsai Wen Sung, Fremont, CA (US);
Chun Yan, San Jose, CA (US);
Hua Chung, Saratoga, CA (US);
Michael X. Yang, Palo Alto, CA (US);
Dixit V. Desai, Pleasanton, CA (US);
Peter J. Lembesis, Boulder Creek, CA (US);
Beijing E-Town Semiconductor Technology Co., Ltd., Beijing, CN;
Mattson Technology, Inc., Fremont, CA (US);
Abstract
Systems and methods for processing a workpiece are provided. In one example, a method includes placing a workpiece on a workpiece support in a processing chamber. The method includes performing a spacer treatment process to expose the workpiece to species generated from a first process gas in a first plasma to perform a spacer treatment process on a spacer layer on the workpiece. The first plasma can be generated in the processing chamber. After performing the spacer treatment process, the method can include performing a spacer etch process to expose the workpiece to neutral radicals generated from a second process gas in a second plasma to etch at least a portion of the spacer layer on the workpiece. The second plasma can be generated in a plasma chamber that is remote from the processing chamber.