The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2021
Filed:
Aug. 23, 2019
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Peng-Chung Jangjian, Zhudong Township, TW;
Kao-Feng Liao, Hsinchu, TW;
Chun-Wen Hsiao, Hsinchu, TW;
Hsin-Ying Ho, Kaohsiung, TW;
Sheng-Chao Chuang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A device includes a semiconductor fin protruding from a substrate, a first gate stack over the semiconductor fin and a second gate stack over the semiconductor fin, a first source/drain region in the semiconductor fin adjacent the first gate stack and a second source/drain region in the semiconductor fin adjacent the second gate stack, a first layer of a first dielectric material on the first gate stack and a second layer of the first dielectric material on the second gate stack, a first source/drain contact on the first source/drain region and adjacent the first gate stack, a first layer of a second dielectric material on a top surface of the first source/drain contact, and a second source/drain contact on the second source/drain region and adjacent the second gate stack, wherein the top surface of the second source/drain contact is free of the second dielectric material.