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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11189714 B1

PDFFull Text
Date of Patent:
Nov. 30, 2021

Filed:

Jul. 14, 2020

Gate stack structure and method for forming the same

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Ming-Chi Huang, Zhubei, TW;

Ying-Liang Chuang, Zhubei, TW;

Ming-Hsi Yeh, Hsinchu, TW;

Kuo-Bin Huang, Jhubei, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Jesse Y Miyoshi

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/285 (2006.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 21/8234 (2006.01); H01L 21/3115 (2006.01); H01L 21/311 (2006.01); H01L 29/49 (2006.01); H01L 29/08 (2006.01); H01L 29/165 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6681 (2013.01); H01L 21/0228 (2013.01); H01L 21/02057 (2013.01); H01L 21/02068 (2013.01); H01L 21/02192 (2013.01); H01L 21/02274 (2013.01); H01L 21/02321 (2013.01); H01L 21/2855 (2013.01); H01L 21/28556 (2013.01); H01L 21/3115 (2013.01); H01L 21/31111 (2013.01); H01L 21/823431 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/4966 (2013.01); H01L 29/66545 (2013.01); H01L 29/66636 (2013.01); H01L 29/785 (2013.01); H01L 29/165 (2013.01); H01L 29/517 (2013.01);
Abstract

Embodiments of the present disclosure provide a method of cleaning a lanthanum containing substrate without formation of undesired lanthanum compounds during processing. In one embodiment, the cleaning method includes treating the lanthanum containing substrate with an acidic solution prior to cleaning the lanthanum containing substrate with a HF solution. The cleaning method permits using lanthanum doped high-k dielectric layer to modulate effective work function of the gate stack, thus, improving device performance.

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