The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2021
Filed:
Apr. 30, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Hui-Hsien Wei, Hsinchu, TW;
Chung-Te Lin, Tainan, TW;
Han-Ting Tsai, New Taipei, TW;
Tai-Yen Peng, Hsinchu, TW;
Pin-Ren Dai, Hsinchu, TW;
Chien-Min Lee, Hsinchu, TW;
Sheng-Chih Lai, Hsinchu, TW;
Wei-Chih Wen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
In a method of manufacturing a semiconductor device, a magnetic random access memory (MRAM) cell structure is formed. The MRAM cell structure includes a bottom electrode, a magnetic tunnel junction (MTJ) stack and a top electrode. A first insulating cover layer is formed over the MRAM cell structure. A second insulating cover layer is formed over the first insulating cover layer. An interlayer dielectric (ILD) layer is formed. A contact opening in the ILD layer is formed, thereby exposing the second insulating cover layer. A part of the second insulating cover layer and a part of the first insulating cover layer are removed, thereby exposing the top electrode. A conductive layer is formed in the opening contacting the top electrode.