The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2021
Filed:
Dec. 20, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Sheng-Chau Chen, Tainan, TW;
Shih-Pei Chou, Tainan, TW;
Ming-Che Lee, Tainan, TW;
Kuo-Ming Wu, Hsinchu County, TW;
Cheng-Hsien Chou, Tainan, TW;
Cheng-Yuan Tsai, Hsin-Chu County, TW;
Yeur-Luen Tu, Taichung, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 24/02 (2013.01); H01L 24/03 (2013.01); H01L 24/13 (2013.01); H01L 24/92 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 24/06 (2013.01); H01L 24/11 (2013.01); H01L 24/48 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/02331 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/03464 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05009 (2013.01); H01L 2224/05016 (2013.01); H01L 2224/05017 (2013.01); H01L 2224/05019 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05088 (2013.01); H01L 2224/05091 (2013.01); H01L 2224/05139 (2013.01); H01L 2224/05144 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/05557 (2013.01); H01L 2224/05559 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/06182 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/13026 (2013.01); H01L 2224/92 (2013.01); H01L 2224/9202 (2013.01); H01L 2224/9222 (2013.01); H01L 2225/06513 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/3512 (2013.01); H01L 2924/35121 (2013.01);
Abstract
The present disclosure provides a semiconductor structure. The semiconductor structure comprises a semiconductive substrate and an interconnect structure over the semiconductive substrate. The semiconductor structure also comprises a bond pad in the semiconductive substrate and coupled to the metal layer. The bond pad comprises two conductive layers.