The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2021
Filed:
May. 25, 2018
Applicant:
Versum Materials Us, Llc, Tempe, AZ (US);
Inventors:
Yi-Chia Lee, Hsin Chu, TW;
Wen Dar Liu, Hsin Chu, TW;
Assignee:
VERSUM MATERIALS US, LLC, Tempe, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09K 13/06 (2006.01); H01L 21/311 (2006.01); C09K 13/00 (2006.01); C23F 1/44 (2006.01); H01L 21/465 (2006.01); C03C 25/68 (2006.01); C23F 1/00 (2006.01); C23F 1/10 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
C09K 13/06 (2013.01); C03C 25/68 (2013.01); C09K 13/00 (2013.01); C23F 1/00 (2013.01); C23F 1/10 (2013.01); C23F 1/44 (2013.01); H01L 21/30608 (2013.01); H01L 21/31111 (2013.01); H01L 21/465 (2013.01);
Abstract
Described herein is an etching solution comprising water, phosphoric acid solution (aqueous), and a hydroxyl group-containing solvent. Such compositions are useful for the selective removal of silicon nitride over silicon oxide from a microelectronic device having such material(s) thereon during its manufacture.