The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 23, 2021

Filed:

Nov. 06, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Jung-Hao Chang, Taichung, TW;

Li-Te Lin, Hsinchu, TW;

Pinyen Lin, Rochester, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 29/78 (2006.01); H01L 27/092 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 21/823821 (2013.01); H01L 27/0924 (2013.01); H01L 29/4966 (2013.01); H01L 29/513 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/517 (2013.01);
Abstract

A structure and a formation method of a semiconductor device are provided. The method includes forming a dummy gate stack over a semiconductor substrate and forming spacer elements over sidewalls of the dummy gate stack. The method also includes removing the dummy gate stack to form a recess between the spacer elements and forming a metal gate stack in the recess. The method further includes etching back the metal gate stack while the metal gate stack is kept at a temperature that is in a range from about 20 degrees C. to about 55 degrees C. In addition, the method includes forming a protection element over the metal gate stack after etching back the metal gate stack.


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