The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2021
Filed:
Aug. 17, 2020
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Jaehyun Yeon, San Diego, CA (US);
Suhyung Hwang, Rancho Mission Viejo, CA (US);
Hong Bok We, San Diego, CA (US);
Kun Fang, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05K 1/02 (2006.01); H01L 23/498 (2006.01); H05K 1/11 (2006.01); H05K 3/40 (2006.01); H05K 3/10 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49811 (2013.01); H01L 23/49822 (2013.01); H05K 1/0296 (2013.01); H05K 1/111 (2013.01); H05K 3/4007 (2013.01); H05K 3/10 (2013.01); H05K 2201/2081 (2013.01);
Abstract
X.5 layer substrates that do not use an embedded traces substrate process during formation may produce a high yield with relaxed L/S in a short manufacturing time (only 4× lamination process without a detach process) at a low cost. For example, a substrate may include an mSAP, two landing pads, two escape lines, two bump pads, and a photo-imageable dielectric layer on the mSAP patterned substrate.