The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2021
Filed:
Oct. 07, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Tai-I Yang, Hsinchu, TW;
Wei-Chen Chu, Taichung, TW;
Hsin-Ping Chen, Hsinchu County, TW;
Chih-Wei Lu, Hsinchu, TW;
Chung-Ju Lee, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor structure includes an integrated circuit, a first dielectric layer over the integrated circuit, an etch stop layer over the first dielectric layer, a barrier layer over the etch stop layer, a conductive layer over the barrier layer, and a void region vertically extending through the conductive layer, the barrier layer, and the etch stop layer. The void region has an upper portion, a middle portion below the upper portion, and a lower portion below the middle portion, the middle portion. The middle portion is narrower than the upper portion and the lower portion.