The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2021
Filed:
Oct. 01, 2018
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/56 (2006.01); H01L 23/498 (2006.01); H01L 23/525 (2006.01); H01L 23/532 (2006.01); H01L 23/538 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76825 (2013.01); H01L 21/76802 (2013.01); H01L 21/76829 (2013.01); H01L 21/76877 (2013.01); H01L 23/49822 (2013.01); H01L 23/49827 (2013.01); H01L 23/525 (2013.01); H01L 23/5329 (2013.01); H01L 23/5389 (2013.01); H01L 21/561 (2013.01); H01L 21/568 (2013.01); H01L 21/76804 (2013.01); H01L 23/3128 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/18 (2013.01); H01L 2224/73267 (2013.01); H01L 2224/97 (2013.01);
Abstract
A method of manufacturing a semiconductor device includes the step of positioning a patterned mask over a dielectric layer. The dielectric layer comprises a low-temperature cure polyimide. The method further includes the steps of exposing a first surface of the dielectric layer through the patterned mask to an I-line wavelength within an I-line stepper, and developing the dielectric layer to form an opening.