The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2021
Filed:
Jul. 11, 2020
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Yun-Wei Cheng, Taipei, TW;
Chun-Wei Chia, Kaohsiung, TW;
Chun-Hao Chou, Tainan, TW;
Kuo-Cheng Lee, Tainan, TW;
Hsun-Ying Huang, Tainan, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1463 (2013.01); H01L 27/14627 (2013.01); H01L 27/14643 (2013.01); H01L 27/14689 (2013.01); H01L 27/14621 (2013.01);
Abstract
A device including a semiconductive substrate having opposite first and second surfaces, a light-sensitive element in the semiconductive substrate, an isolation structure extending at least from the second surface of the semiconductive substrate to within the semiconductive substrate, and a color filter over the second surface of the semiconductive substrate. The isolation structure includes a dielectric fill and a first high-k dielectric layer wrapping around the dielectric fill.