The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 02, 2021

Filed:

Jun. 07, 2019
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Shi You, Sunnyvale, CA (US);

He Ren, San Jose, CA (US);

Mehul Naik, San Jose, CA (US);

Yi Xu, San Jose, CA (US);

Feng Chen, San Jose, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76877 (2013.01); H01L 21/02063 (2013.01); H01L 21/02068 (2013.01); H01L 21/31144 (2013.01); H01L 21/76814 (2013.01); H01L 21/76846 (2013.01); H01L 21/76847 (2013.01); H01L 21/76849 (2013.01);
Abstract

Methods and apparatus for an interconnect formed on a substrate and a method of forming the interconnect thereon. In embodiments, the methods include etching through a hard mask disposed atop a low-k dielectric layer to form a via through the low-k dielectric layer and expose a conductive surface; contacting the conductive surface with dilute hydrofluoric acid to remove contaminants therefrom; removing the hard mask disposed atop the low-k dielectric layer; and applying a remote hydrogen plasma to the conductive surface to form an exposed portion of the conductive surface.


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