The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2021
Filed:
Jan. 18, 2018
Applicant:
Entegris, Inc., Billerica, MA (US);
Inventors:
Daniela White, Ridgefield, CT (US);
Thomas Parson, Billerica, MA (US);
Michael White, Billerica, MA (US);
Emanuel I. Cooper, Scarsdale, NY (US);
Atanu Das, Danbury, CT (US);
Assignee:
Entegris, Inc., Billerica, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09G 1/04 (2006.01); H01L 21/02 (2006.01); H01L 21/321 (2006.01); C08L 33/08 (2006.01); C08L 33/10 (2006.01); C09G 1/16 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02065 (2013.01); C08L 33/08 (2013.01); C08L 33/10 (2013.01); C09G 1/04 (2013.01); C09G 1/16 (2013.01); H01L 21/3212 (2013.01); C08L 2201/54 (2013.01);
Abstract
A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The composition achieves highly efficacious removal of the ceria particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, or tungsten-containing materials.