The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2021
Filed:
Jul. 14, 2020
Mattson Technology, Inc., Fremont, CA (US);
Beijing E-town Semiconductor Technology Co., Ltd., Beijing, CN;
Ting Xie, Fremont, CA (US);
Hua Chung, Saratoga, CA (US);
Bin Dong, Fremont, CA (US);
Xinliang Lu, Fremont, CA (US);
Haichun Yang, San Jose, CA (US);
Michael X. Yang, Palo Alto, CA (US);
Beijing E-Town Semiconductor Technology Co., Ltd., Beijing, CN;
Mattson Technology, Inc., Fremont, CA (US);
Abstract
Processes for removing photoresist layer(s) from a workpiece, such as a semiconductor are provided. In one example implementation, a method for processing a workpiece can include supporting a workpiece on a workpiece support. The workpiece can have a photoresist layer and a low-k dielectric material layer. The method can include performing a hydrogen radical etch process on the workpiece to remove at least a portion of the photoresist layer. The method can also include exposing the workpiece to an ozone process gas to remove at least a portion of the photoresist layer.