The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2021
Filed:
May. 23, 2019
Mattson Technology, Inc., Fremont, CA (US);
Beijing E-town Semiconductor Technology Co., Ltd., Beijing, CN;
Qi Zhang, San Jose, CA (US);
Xinliang Lu, Fremont, CA (US);
Hua Chung, Saratoga, CA (US);
Michael X. Yang, Palo Alto, CA (US);
Beijing E-Town Semiconductor Technology Co., Ltd., Beijing, CN;
Mattson Technology, Inc., Fremont, CA (US);
Abstract
Methods, systems, and apparatus for generating hydrogen radicals for processing a workpiece, such as a semiconductor workpiece, are provided. In one example implementation, a method can include generating one or more species in a plasma chamber from an inert gas by inducing a plasma in the inert gas using a plasma source; mixing hydrogen gas with the one or more species to generate one or more hydrogen radicals; and exposing the workpiece in a processing chamber to the one or more hydrogen radicals.