The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 26, 2021

Filed:

Apr. 07, 2020
Applicant:

Globalfoundries U.s. Inc., Santa Clara, CA (US);

Inventors:

Haiting Wang, Clifton Park, NY (US);

Sipeng Gu, Clifton Park, NY (US);

Shesh Mani Pandey, Saratoga Springs, NY (US);

Lixia Lei, Clifton Park, NY (US);

Gregory Costrini, Flanders, NJ (US);

Assignee:

GlobalFoundries U.S. Inc., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 21/8234 (2006.01); H01L 27/092 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 27/0924 (2013.01); H01L 29/0649 (2013.01); H01L 29/785 (2013.01);
Abstract

One illustrative device disclosed herein includes at least one fin structure and an isolation structure comprising a stepped upper surface comprising a first region and a second region. The first region has a first upper surface and the second region has a second upper surface, wherein the first upper surface is positioned at a first level and the second upper surface is positioned at a second level and wherein the first level is below the second level. In this illustrative example, the device also includes a gate structure comprising a first portion and a second portion, wherein the first portion of the gate structure is positioned above the first upper surface of the isolation structure and above the at least one fin structure and wherein the second portion of the gate structure is positioned above the second upper surface of the isolation structure.


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