The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2021
Filed:
Mar. 28, 2018
Kla-tencor Corporation, Milpitas, CA (US);
Manh Nguyen, Sunnyvale, CA (US);
Phillip Atkins, San Jose, CA (US);
Alexander Kuznetsov, Austin, TX (US);
Liequan Lee, Fremont, CA (US);
Natalia Malkova, Mountain View, CA (US);
Paul Aoyagi, Sunnyvale, CA (US);
Mikhail Sushchik, Pleasanton, CA (US);
Dawei Hu, Shanghai, CN;
Houssam Chouaib, Milpitas, CA (US);
KLA-Tencor Corporation, Milpitas, CA (US);
Abstract
A parameterized geometric model of a structure can be determined based on spectra from a wafer metrology tool. The structure can have geometry-induced anisotropic effects. Dispersion parameters of the structure can be determined from the parameterized geometric model. This can enable metrology techniques to measure nanostructures that have geometries and relative positions with surrounding structures that induce non-negligible anisotropic effects. These techniques can be used to characterize process steps involving metal and semiconductor targets in semiconductor manufacturing of, for example, FinFETs or and gate-all-around field-effect transistors.