The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2021
Filed:
Aug. 05, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Huan-Chieh Su, Changhua County, TW;
Zhi-Chang Lin, Hsinchu County, TW;
Ting-Hung Hsu, Miaoli County, TW;
Jia-Ni Yu, New Taipei, TW;
Wei-Hao Wu, Hsinchu, TW;
Chih-Hao Wang, Hsinchu County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 29/66 (2006.01); H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 21/82345 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823456 (2013.01); H01L 21/823821 (2013.01); H01L 27/088 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 29/4966 (2013.01); H01L 29/6681 (2013.01); H01L 29/7848 (2013.01); H01L 29/165 (2013.01); H01L 29/42376 (2013.01);
Abstract
A method for manufacturing a semiconductor device is provided. The method for manufacturing a semiconductor device includes forming a gate electrode layer in a gate trench; filling a recess in the gate electrode layer with a dielectric feature; and etching back the gate electrode layer from top end surfaces of the gate electrode layer while leaving a portion of the gate electrode layer under the dielectric feature.