The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2021
Filed:
Jun. 29, 2016
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Benjamin Chu-Kung, Portland, OR (US);
Van H. Le, Portland, OR (US);
Willy Rachmady, Beaverton, OR (US);
Matthew V. Metz, Portland, OR (US);
Jack T. Kavalieros, Portland, OR (US);
Ashish Agrawal, Hillsboro, OR (US);
Seung Hoon Sung, Portland, OR (US);
Assignee:
Intel Corporatuon, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49816 (2013.01); H01L 29/1054 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract
A subfin layer is deposited on a substrate. A fin layer is deposited on the subfin layer. The subfin layer has a conduction band energy offset relative to the fin layer to prevent a leakage in the subfin layer. In one embodiment, the subfin layer comprises a group IV semiconductor material layer that has a bandgap greater than a bandgap of the fin layer.