The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 12, 2021

Filed:

Mar. 18, 2020
Applicant:

Globalfoundries U.s. Inc., Santa Clara, CA (US);

Inventors:

Qizhi Liu, Lexington, MA (US);

Vibhor Jain, Williston, VT (US);

Judson R. Holt, Ballston Lake, NY (US);

Herbert Ho, New Windsor, NY (US);

Claude Ortolland, Garrison, NY (US);

John J. Pekarik, Underhill, VT (US);

Assignee:

GLOBALFOUNDRIES U.S. INC., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/737 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41708 (2013.01); H01L 29/0804 (2013.01); H01L 29/66242 (2013.01); H01L 29/737 (2013.01);
Abstract

The present disclosure relates to semiconductor structures and, more particularly, to a heterojunction bipolar transistor and methods of manufacture. The structure includes: a sub-collector region; a collector region in electrical connection to the sub-collector region; an emitter located adjacent to the collector region and comprising emitter material, recessed sidewalls on the emitter material and an extension region extending at an upper portion of the emitter material above the recessed sidewalls; and an extrinsic base separated from the emitter by the recessed sidewalls.


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