The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 05, 2021

Filed:

Jan. 31, 2020
Applicant:

Carl Zeiss Smt Gmbh, Oberkochen, DE;

Inventors:

Bjoern Liebaug, Ulm, DE;

Moritz Becker, Aalen, DE;

Kerstin Hild, Schwaebisch Gmuend, DE;

Joachim Hartjes, Aalen, DE;

Simon Haas, Pfaffenhofen an der Ilm, DE;

Assignee:

CARL ZEISS SMT GMBH, Oberkochen, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70033 (2013.01); G03F 7/702 (2013.01); G03F 7/7015 (2013.01); G03F 7/70916 (2013.01); G03F 7/70925 (2013.01); G03F 7/70941 (2013.01);
Abstract

An optical arrangement () for EUV radiation includes: at least one reflective optical element () having a main body () with a coating () that reflects EUV radiation (). At least one shield () is fitted to at least one surface region () of the main body () and protects the at least one surface region () against an etching effect of a plasma (H+, H*) that surrounds the reflective optical element () during operation of the optical arrangement (). A distance (A) between the shield () and the surface region () of the main body () is less than double the Debye length (λ), preferably less than the Debye length (λ), of the surrounding plasma (H+, H*).


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