The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2021
Filed:
Sep. 27, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Hsin-Che Chiang, Taipei, TW;
Yu-San Chien, Hsinchu, TW;
Ta-Chun Lin, Hsinchu, TW;
Chun-Sheng Liang, Puyan Township, TW;
Kuo-Hua Pan, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method for forming a semiconductor structure is provided. The method for forming the semiconductor structure includes forming a first fin structure with a first composition and a second fin structure with a second composition, oxidizing the first fin structure to form a first oxide layer and oxidizing the second fin structure to form a second oxide layer, removing the second oxide layer formed on the second fin structure, oxidizing the second fin structure to form a third oxide layer over the second fin structure, and forming a first metal gate electrode layer over the first oxide layer and a second metal gate electrode layer over the third oxide layer.