The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2021
Filed:
May. 31, 2019
Lam Research Corporation, Fremont, CA (US);
Hu Kang, Tualatin, OR (US);
Shankar Swaminathan, Beaverton, OR (US);
Jun Qian, Sherwood, OR (US);
Wanki Kim, Portland, OR (US);
Dennis M. Hausmann, Lake Oswego, OR (US);
Bart J. van Schravendijk, Palo Alto, CA (US);
Adrien LaVoie, Newberg, OR (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
Provided herein are methods and apparatus for filling one or more gaps on a semiconductor substrate. The disclosed embodiments are especially useful for forming seam-free, void-free fill in both narrow and wide features. The methods may be performed without any intervening etching operations to achieve a single step deposition. In various implementations, a first operation is performed using a novel PEALD fill mechanism to fill narrow gaps and line wide gaps. A second operation may be performed using PECVD methods to continue filling the wide gaps.