The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2021
Filed:
Sep. 05, 2018
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Tsan-Chun Wang, Hsinchu, TW;
Chiao-Ting Tai, New Taipei, TW;
Che-Fu Chiu, New Taipei, TW;
Chun-Feng Nieh, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 21/265 (2006.01); H01L 21/768 (2006.01); H01L 21/225 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0847 (2013.01); H01L 21/2253 (2013.01); H01L 21/26513 (2013.01); H01L 21/76843 (2013.01); H01L 29/66492 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 2029/7858 (2013.01);
Abstract
A method for forming a semiconductor device structure is provided. The method includes forming a semiconductor structure over a semiconductor substrate. The method also includes implanting carbon into the semiconductor structure. The method further includes implanting gallium into the semiconductor structure. In addition, the method includes heating the semiconductor structure after the implanting of carbon and gallium.