The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2021
Filed:
Oct. 16, 2019
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Wenxiang Xu, Wuhan, CN;
Wei Xu, Wuhan, CN;
Pan Huang, Wuhan, CN;
Ping Yan, Wuhan, CN;
Zongliang Huo, Wuhan, CN;
Wenbin Zhou, Wuhan, CN;
Ji Xia, Wuhan, CN;
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Abstract
Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a 3D memory device includes a memory stack, a plurality of channel structures, and a source structure. The memory stack is over a substrate and includes interleaved a plurality of conductor layers and a plurality of insulating layers. The plurality of channel structures extend vertically in the memory stack. The source structure extend in the memory stack. The source structure includes a plurality of source contacts each in a respective insulating structure, and two adjacent ones of the plurality of source contacts are conductively connected to one another.