The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2021
Filed:
Oct. 18, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Chao-Hsun Wang, Taoyuan County, TW;
Wang-Jung Hsueh, Hsinchu, TW;
Kuo-Yi Chao, Hsinchu, TW;
Mei-Yun Wang, Hsin-Chu, TW;
Ru-Gun Liu, Hsinchu County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/535 (2006.01); H01L 29/423 (2006.01); H01L 29/417 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 21/74 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 23/535 (2013.01); H01L 21/743 (2013.01); H01L 21/76877 (2013.01); H01L 21/76895 (2013.01); H01L 23/528 (2013.01); H01L 23/53228 (2013.01); H01L 29/41725 (2013.01); H01L 29/4232 (2013.01);
Abstract
A contact structure of a semiconductor device includes a gate contact in contact with a gate structure and extending through a first dielectric layer, a source/drain contact in contact with a source/drain feature and extending through the first dielectric layer, a common rail line in contact with the gate contact and the source/drain contact, and a power rail line in contact with the common rail line and electrically coupled to a ground of the semiconductor device.