The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2021
Filed:
Feb. 12, 2018
Electron-beam lithography process adapted for a sample comprising at least one fragile nanostructure
Centre National DE LA Recherche Scientifique, Paris, FR;
Sorbonne Universite, Paris, FR;
Universite Paris Diderot—paris, Paris, FR;
Agnès Maitre, Paris, FR;
Amit Raj Dhawan, Paris, FR;
Pascale Senellart, Orsay, FR;
Cherif Belacel, Paris, FR;
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, Paris, FR;
SORBONNE UNIVERSITE, Paris, FR;
UNIVERSITE PARIS DIDEROT—PARIS, Paris, FR;
Abstract
Disclosed is a lithography process on a sample including at least one structure and covered by at least a lower layer of resist and a upper layer of resist the process including: using an optical device to image or determine, in reference to the optical device, a position of the selected structure and positions of markers integral with the sample; using an electron-beam device, imaging or determining the position of each marker in reference to the electron-beam device; deducing the position of the selected structure in reference to the electron-beam device; exposing to an electron beam the upper layer of resist above the position of the selected structure to remove all the thickness of the upper layer of resist above the position of the selected structure but none or only part of the thickness of the lower layer of resist above the position of the selected structure.