The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 21, 2021

Filed:

Mar. 16, 2020
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Curtis Chun-I Hsieh, Singapore, SG;

Wei-Hui Hsu, Singapore, SG;

Wanbing Yi, Singapore, SG;

Yi Jiang, Singapore, SG;

Kai Kang, Singapore, SG;

Juan Boon Tan, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); H01L 27/2436 (2013.01); H01L 45/1675 (2013.01); G11C 2013/0045 (2013.01); G11C 2013/0054 (2013.01); G11C 2213/79 (2013.01);
Abstract

The present disclosure generally relates to memory devices and methods of forming the same. More particularly, the present disclosure relates to resistive random-access (ReRAM) memory devices incorporating reference cells for achieving high sensing yield. The present disclosure provides a memory device including a main cell structure having a dimension, and a reference cell structure electrically coupled to the main cell structure. The reference cell structure has a dimension that is different from the dimension of the main cell structure, in which the main cell structure and the reference cell structure include a switching element arranged between a pair of conductors.


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