The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2021
Filed:
Aug. 16, 2019
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Ekmini A. De Silva, Slingerlands, NY (US);
Nelson Felix, Slingerlands, NY (US);
Indira Seshadri, Niskayuna, NY (US);
Stuart A. Sieg, Albany, NY (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 23/544 (2006.01); H01L 21/027 (2006.01); H01L 21/768 (2006.01); H01L 21/48 (2006.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
H01L 21/76294 (2013.01); H01L 21/0272 (2013.01); H01L 21/4885 (2013.01); H01L 21/768 (2013.01); H01L 23/544 (2013.01); B82Y 40/00 (2013.01); H01L 2223/54426 (2013.01);
Abstract
A tunable amorphous silicon layer for use with multilayer patterning stacks can be used to maximize transparency and minimize reflections so as to improve overlay metrology contrast. By increasing the hydrogen content in the amorphous silicon layer, the extinction coefficient (k) value and the refractive index (n) value can be decreased to desired values. Methods for improving overlay metrology contrast with the tunable amorphous silicon layer are disclosed.