The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2021
Filed:
May. 23, 2019
Kla-tencor Corporation, Milpitas, CA (US);
Hamamatsu Photonics K.k., Hamamatsu, JP;
Yung-Ho Alex Chuang, Cupertino, CA (US);
Jingjing Zhang, San Jose, CA (US);
John Fielden, Los Altos, CA (US);
David L. Brown, Los Gatos, CA (US);
Masaharu Muramatsu, Hamamatsu, JP;
Yasuhito Yoneta, Hamamatsu, JP;
Shinya Otsuka, Hamamatsu, JP;
KLA-Tencor Corporation, Milpitas, CA (US);
Hamamatsu Photonics K.K., Shizuoka, JP;
Abstract
An image sensor for electrons or short-wavelength light includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. The circuit elements are connected by metal interconnects comprising a refractory metal. An anti-reflection or protective layer may be formed on top of the pure boron layer. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor.