The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2021
Filed:
Nov. 18, 2019
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Ling-Fu Nieh, Taipei, TW;
Chun-Wei Hsu, Hsinchu, TW;
Pinlei Edmund Chu, Hsinchu, TW;
Chi-Jen Liu, Taipei, TW;
Liang-Guang Chen, Hsinchu, TW;
Yi-Sheng Lin, Taichung, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A method of manufacturing a device includes exposing at least one of a source/drain contact plug or a gate contact plug to a metal ion source solution during a manufacturing process, wherein a constituent metal of a metal ion in the metal ion source solution and the at least one source/drain contact plug or gate contact plug is the same. If the source/drain contact plug or the gate contact plug is formed of cobalt, the metal ion source solution includes a cobalt ion source solution. If the source/drain contact plug or the gate contact plug is formed of tungsten, the metal ion source solution includes a tungsten ion source solution.