The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2021
Filed:
Jun. 04, 2019
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Hao-Hsuan Chang, Kaohsiung, TW;
Hung-Chun Lee, Pingtung County, TW;
Shu-Ming Yeh, Tainan, TW;
Ting-An Chien, Tainan, TW;
Bin-Siang Tsai, Changhua County, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02329 (2013.01); H01L 21/31116 (2013.01);
Abstract
A method for fabricating semiconductor device includes the steps of: forming a trench in a substrate; forming a pad layer adjacent to two sides of trench; forming a dielectric layer to fill the trench; and performing a dry etching process to remove the pad layer and part of the dielectric layer to form a shallow trench isolation (STI). Preferably, the dry etching process comprises a non-plasma etching process.