The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2021
Filed:
Oct. 03, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Han-Yu Lin, Nantou County, TW;
Chansyun David Yang, Shinchu, TW;
Tze-Chung Lin, Hsinchu, TW;
Fang-Wei Lee, Hsinchu, TW;
Fo-Ju Lin, Keelung, TW;
Li-Te Lin, Hsinchu, TW;
Pinyen Lin, Rochester, NY (US);
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method of fabricating a semiconductor device includes forming a structure including multiple nanowires vertically stacked above a substrate; depositing a dielectric material layer wrapping around the nanowires; performing a treatment process to a surface portion of the dielectric material layer; selectively etching the surface portion of the dielectric material layer; repeating the steps of performing the treatment process and selectively etching until the nanowires are partially exposed; and forming a gate structure engaging the nanowires.